AO4440 Datasheet | Alpha & Omega Semiconductors

Description .. provide Features VDS (V) = 60V ID = 5A (VGS = 10V) RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) The AO4440 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4440 is Pb-free (meets ROHS & Sony 259 specifications). AO4440L is a Green Product ordering option. AO4440 and AO4440L are electrically identical D S S S G D D D D SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Maximum 60 ±20 5 4 20 2.5 1.6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 38 69 24 Max 50 80 30 Units °C/W °C/W °C/W N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=48V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=5A Static Drain-Source On-Resistance VGS=4.5V, ID=4A g FS VSD IS Forward Transconductance VDS=5V, ID=5A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1 20 42 75 54 11 0.78 1 4 450 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 60 25 1.65 8.5 VGS=10V, VDS=30V, ID=5A 4.3 1.6 2.2 5.1 VGS=10V, VDS=30V, RL=6Ω, RGEN=3Ω IF=5A, d I/dt=100A/µs Min 60 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) .. Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 100 2.3 3 55 75 µA n A V A mΩ mΩ S V A p F p F p F ID(ON) RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse...