AO4446 Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4446 N-Channel Enhancement Mode Field Effect Transistor General.

Datasheet Details

Part number	AO4446
Manufacturer	Alpha & Omega Semiconductors
File Size	142.08 KB
Description	N-Channel MOSFET
Datasheet	AO4446_AlphaOmegaSemiconductors.pdf

The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low ..

gate resistance.

This device is ideally suited for use in PWM applications.

VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) S S S G D D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current B Repetitive avalanche energy L=0.1mH TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum.

Brand Logo	Part Number	Description	Manufacturer
	AO4446	N-Channel MOSFET	Kexin