AO4442 Datasheet | Alpha & Omega Semiconductors

Description The AO4442 uses advanced trench technology to provide excellent RDS(ON), low gate charge and .. operation with gate voltages from 4.5V to 25V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4442 is Pb-free (meets ROHS & Sony 259 specifications). AO4442L is a Green Product ordering option. AO4442 and AO4442L are electrically identical. Features VDS (V) = 75V ID = 3.1A (VGS = 10V) RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.5V) D S S S G D D D D SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Maximum 75 ±25 3.1 2.5 20 2.5 1.6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 38 69 24 Max 50 80 30 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) .. Conditions ID=10m A, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.1A TJ=125°C VGS=4.5V, ID=2A VDS=5V, ID=3.1A Min 75 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance 1 5 100 1 20 100 180 120 8.2 0.79 1 10 303 350 130 220 165 2.4 3 µA n A V A mΩ mΩ S V A p F p F p F RDS(ON) g FS VSD IS Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz...