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AO4442 Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4442 N-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AO4442 uses advanced trench technology to provide excellent RDS(ON), low gate charge and ..

operation with gate voltages from 4.5V to 25V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = 75V ID = 3.1A (VGS = 10V) RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.5V) D S S S G D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 75 ±25 3.1 2.5 20 2.5 1.6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Par.

AO4442 Distributor