Datasheet Summary
AO4458 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4458/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications. AO4458 and AO4458L are electrically identical. -RoHs pliant -AO4458L is Halogen Free
Features
VDS (V) = 30V (VGS = 10V) ID = 20A RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 6.4mΩ (VGS = 4.5V)
D S S S G D D D D S G
SOIC-8...
