AO4816 Datasheet | Alpha & Omega Semiconductors

Description The AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pbfree (meets ROHS & Sony 259 specifications). AO4816L is a Green Product ordering option. AO4816 and AO4816L are electrically identical. Features VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 20V) RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 46mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 .. 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C B Pulsed Drain Current IDM Power Dissipation TA=25°C TA=70°C PD TJ, TSTG Maximum 30 ±25 8.5 6.5 40 2 1.28 -55 to 150 Units V V A W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A C Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 33 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±25V VDS=VGS ID=250 µA VGS=10V, VDS=5V VGS=20V, I D=8.5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=10V, I D=8.5A VGS=4.5V, I D=5A g FS VSD IS Forward Transconductance VDS=5V, ID=10A 10 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 1.5 30 13.5 17.5 16 36 17 0.76 1 4.3 758 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 128 0.7 16.5 VGS=10V, VDS=15V, I D=8.5A 8.6 2.5 4.8 5.4 VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω IF=8.5A, d I/dt=100A/ µs IF=8.5A, d I/dt=100A/ µs 5.1 14.4 3.7 16.9 6.6 17 22 20 46 2.4 Min 30 1 5 100 3 Typ Max Units V µA n A V A mΩ mΩ mΩ S V A p F p F p F Ω n C n C n C n C ns ns ns ns ns n C STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS...