Datasheet Details
| Part number | AON7520 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 385.48 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7520-AlphaOmegaSemiconductors.pdf |
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Overview: AON7520 30V N-Channel AlphaMOS General.
| Part number | AON7520 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 385.48 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7520-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 2.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free pliant Product Summary V DS ID (at VGS=10V) 30V 50A < 1.8mΩ < 2.1mΩ < 3.1mΩ HBM Class 2 RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) Typical ESD protection Application • Load switch, battery switch in portable devices 100% UIS Tested 100% R g Tested Top View DFN 3.3x3.3 EP Bottom View Top View 1 2 3 4 D 8 7 6 5 G Pin 1 S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbo Parameter l Parameter mbol Sy Drain-Source Voltage VDS Maximum Maximum 30 Units V Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C C VGS C TC=25° TC=100° C C TA=25° TA=70° C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C ±12 50 39 200 48 38 60 90 36 83.3 33.3 6.2 4 -55 to 150 V A A A mJ V W W ° C Avalanche energy L=0.05mH Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 45 1.1 Max 20 55 1.5 Units ° C/W ° C/W ° C/W Rev.1.0: May 2013 .aosmd.
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AON7520 C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=125° C VDS=0V, VGS=±10V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=4.5V, ID=20A VGS=2.5V, ID=20A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V 0.5 0.85 1.45 2.05 1.66 2.35 125 0.61 1 50 4175 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.5 1505 300 1 77.5 VGS=10V, VDS=15V, ID=20A 37 6 12.5 6.5 VGS=10V, VDS=15V, R L=0.75Ω, RGEN=3
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