Datasheet Details
| Part number | AON7524 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 375.58 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7524-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AON7524 30V N-Channel AlphaMOS General.
| Part number | AON7524 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 375.58 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7524-AlphaOmegaSemiconductors.pdf |
|
|
|
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 2.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free pliant Product Summary V DS ID (at VGS=10V) 30V 28A < 3.3mΩ < 4mΩ < 5.8mΩ HBM Class 3B RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) Typical ESD protection Application • DC/DC Converters 100% UIS Tested 100% R g Tested Top View DFN 3x3 EP Bottom View Top View 1 2 3 4 D 8 7 6 5 G Pin 1 S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbo Parameter l Parameter mbol Sy Drain-Source Voltage VDS Maximum Maximum 30 Units V Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.05mH C VDS Spike Power Dissipation B Power Dissipation A 100ns TC=25° C TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C C TC=25° TC=100° C VGS ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG ±12 28 22 112 25 20 28 20 36 32 12.8 3.1 2 -55 to 150 V A A A mJ V W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 3.1 Max 40 75 3.9 Units ° C/W ° C/W ° C/W Rev.1.0: March 2013 .aosmd.
Page 1 of 6 http://..
AON7524 C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=125° C VDS=0V, VGS=±10V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=4.5V, ID=18A VGS=2.5V, ID=16A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V 0.4 0.8 2.6 3.6 3 4.4 103 0.62 1 28 2250 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1.5 800 65 3.0 37 VGS=10V, VDS=15V, ID=20A 16 3.2 5.2 5 VGS=10V, VDS=15V, R L=0.75Ω, RGEN=3Ω 3 Min 30 Typ Max Units V STATIC PARAMET
| Part Number | Description |
|---|---|
| AON7520 | 30V N-Channel MOSFET |
| AON7522E | 30V N-Channel MOSFET |
| AON7528 | 30V N-Channel MOSFET |
| AON7502 | 30V N-Channel MOSFET |
| AON7506 | 30V N-Channel MOSFET |
| AON7508 | 30V N-Channel MOSFET |
| AON7510 | 30V N-Channel MOSFET |
| AON7514 | N-Channel MOSFET |
| AON7516 | 30V N-Channel MOSFET |
| AON7532E | 30V N-Channel MOSFET |