Datasheet Details
| Part number | AON7522E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 388.31 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7522E-AlphaOmegaSemiconductors.pdf |
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Overview: AON7522E 30V N-Channel AlphaMOS General.
| Part number | AON7522E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 388.31 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7522E-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free pliant Product Summary V DS ID (at VGS=10V) 30V 34A < 4mΩ < 6.8mΩ HBM Class 2 RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Typical ESD protection Application • DC/DC Converters 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View S S S G 1 2 3 4 Top View D 8 7 6 5 D D D D G Pin 1 S C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage C TC=25° Continuous Drain ID TC=100° C CurrentG Maximum 30 ±20 34 27 136 21 17 35 31 36 31 12 3.1 2 -55 to 150 Units V V A Pulsed Drain Current Continuous Drain Current Avalanche Current C C IDM TA=25° C TA=70° C IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.05mH C VDS Spike Power Dissipation B Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 3.2 Max 40 75 4 Units ° C/W ° C/W ° C/W Rev0: Mar 2012 .aosmd.
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AON7522E C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS,ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=16A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.2 1.8 3.2 5 5.3 62 0.7 1 34 1540 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.8 485 448 1.7 33.4 VGS=10V, VDS=15V, ID=20A 19.7 3.3 15.0 7 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 8.3 24 Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
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