Datasheet Details
| Part number | AON7528 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 380.86 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7528-AlphaOmegaSemiconductors.pdf |
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Overview: AON7528 30V N-Channel AlphaMOS General.
| Part number | AON7528 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 380.86 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7528-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free pliant Product Summary V DS ID (at VGS=10V) 30V 50A < 2mΩ < 3.4mΩ HBM Class 2 RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Typical ESD protection Application • DC/DC Converters 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View S S S G 1 2 3 4 Top View D 8 7 6 5 D D D D G Pin 1 S C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage C TC=25° Continuous Drain ID TC=100° C CurrentG Maximum 30 ±20 50 39 200 45 36 50 63 36 83 33 6.2 4 -55 to 150 Units V V A Pulsed Drain Current Continuous Drain Current Avalanche Current C C IDM TA=25° C TA=70° C IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.05mH C VDS Spike Power Dissipation B Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 45 1.1 Max 20 55 1.5 Units ° C/W ° C/W ° C/W Rev0: May 2012 .aosmd.
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AON7528 C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS,ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.2 1.8 1.6 2.3 2.6 81 0.7 1 50 2895 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.5 1439 149 1.0 45.4 VGS=10V, VDS=15V, ID=20A 21.3 8.0 9.0 8.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 5.0 31.0 Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Vo
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