AOU412 Datasheet | Alpha & Omega Semiconductors

Description The AOU412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOU412 is Pb-free (meets ROHS & Sony 259 specifications). AOU412L is a Green Product ordering option. AOU412 and AOU412L are electrically identical. TO-251 D Top View Drain Connected to Tab Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Repetitive avalanche energy L=0.1m H TC=25°C Power Dissipation Maximum 30 ±20 85 65 200 30 120 100 50 -55 to 175 Units V V A A m J W °C TC=25°C TC=100°C B ID IDM IAR EAR PD TJ, TSTG TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Steady-State Steady-State Symbol RθJA RθJL Typ 105 1 Max 125 1.5 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. .. Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C Min 30 Typ Max Units V 1 5 100 2.5 7.5 10 11 1 85 1600 µA n A V A 1.5 85 2.15 5.7 8.4 8.7 60 0.72 mΩ mΩ S V A p F p F p F Ω n C n C n C n...