AOU417 Datasheet | Alpha & Omega Semiconductors

Description The AOU417 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AOU417 is Pbfree (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 22mΩ (VGS = -10V) RDS(ON) < 40mΩ (VGS = -4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested TO-251 Top View Drain Connected to Tab Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1m H TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case C Steady-State Steady-State Maximum -30 ±20 -18 -18 -40 -18 16.2 50 25 -55 to 175 Units V V A A m J W °C TA=25°C G TA=100°C G ID IDM IAR EAR PD TJ, TSTG Symbol RθJA RθJL Typ 105 2.5 Max 125 3 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. .aosmd. .. Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS ISM Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-18A TJ=125°C VGS=-4.5V, ID=-10A VDS=-5V, ID=-18A Min -30 Typ Max Units V -1 -5 ±100 -1.4 -40 18 25 29 21 -0.7 -1 -1.2 -40 1573 1900 22 30 40 -2 -2.7 µA n A V A mΩ mΩ S V A A p F p F p F Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Pulsed Body-Diode Current B DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance...