AOU414 Datasheet | Alpha & Omega Semiconductors

Description The AOU414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOU414 is Pbfree (meets ROHS & Sony 259 specifications). AOU414L is a Green Product ordering option. AOU414 and AOU414L are electrically identical. TO-251 D Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.7mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) Top View Drain Connected to Tab G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1m H TC=25°C Power Dissipation Maximum 30 ±20 85 73 200 30 140 100 50 -55 to 175 Units V V A A m J W °C TC=25°C TC=100°C B ID IDM IAR EAR PD TJ, TSTG TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Steady-State Steady-State Symbol RθJA RθJL Typ 100 0.7 Max 125 1.5 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. .. Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C Min 30 Typ Max Units V 1 5 100 2.4 5.7 8 7.5 1 85 7000 µA n A V A 1.2...