AOU413 Datasheet | Alpha & Omega Semiconductors

Description The AOU413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOU413 is Pb-free (meets ROHS & Sony 259 specifications). AOU413L is a Green Product ordering option. AOU413 and AOU413L are electrically identical. TO-251 Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 69mΩ (VGS = -4.5V) Top View Drain Connected to Tab Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1m H TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case C Steady-State Steady-State Maximum -40 ±20 -12 -12 -30 -12 30 50 25 -55 to 175 Units V V A A m J W °C TA=25°C TA=100°C G ID IDM IAR EAR PD TJ, TSTG Symbol RθJA RθJL Typ 40 2.5 Max 50 3 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. .. Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-32V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-12A TJ=125°C VGS=-4.5V, I D=-8A VDS=-5V, ID=-12A Min -40 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance -1 -5 ±100 -1 -30 36 56 51 16 -0.75 -1 -12 657 45 70 69 -1.9 -3 µA n A V A mΩ mΩ S V A p F p F p F Ω n C n C n C n C ns ns ns ns ns n C Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS...