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AFM04P2-000 - Power GaAs MESFET

General Description

The AFM04P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm.

Key Features

  • I 21 dBm Output Power @ 18 GHz I High Associated Gain, 9 dB @ 18 GHz I High Power Added Efficiency, 25% I Broadband Operation, DC.
  • 40 GHz I 0.25 µm Ti/Pd/Au Gates I Passivated Surface I Through-Substrate Via Hole Grounding 0.327 mm 0.655 mm Chip thickness = 0.1 mm. Drain 0.110 mm 0.395 mm Gate 0.110 mm.

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Datasheet Details

Part number AFM04P2-000
Manufacturer Alpha Industries
File Size 43.03 KB
Description Power GaAs MESFET
Datasheet download datasheet AFM04P2-000 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ka Band Power GaAs MESFET Chip AFM04P2-000 Features I 21 dBm Output Power @ 18 GHz I High Associated Gain, 9 dB @ 18 GHz I High Power Added Efficiency, 25% I Broadband Operation, DC–40 GHz I 0.25 µm Ti/Pd/Au Gates I Passivated Surface I Through-Substrate Via Hole Grounding 0.327 mm 0.655 mm Chip thickness = 0.1 mm. Drain 0.110 mm 0.395 mm Gate 0.110 mm Description The AFM04P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.