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AFM06P2-000 - Power GaAs MESFET

General Description

The AFM06P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 600 µm.

Key Features

  • s 22.5 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC.
  • 40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding 0.327 mm 0.655 mm Chip thickness = 0.1 mm. Drain 0.395 mm 0.110 mm Gate 0.110 mm.

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Datasheet Details

Part number AFM06P2-000
Manufacturer Alpha Industries
File Size 19.28 KB
Description Power GaAs MESFET
Datasheet download datasheet AFM06P2-000 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ka Band Power GaAs MESFET Chip AFM06P2-000 Features s 22.5 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding 0.327 mm 0.655 mm Chip thickness = 0.1 mm. Drain 0.395 mm 0.110 mm Gate 0.110 mm Description The AFM06P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 600 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.