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AFM04P3-000 - Power GaAs MESFET

General Description

The AFM04P3-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm.

Key Features

  • s 21 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC.
  • 26 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface Chip Layout.

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Datasheet Details

Part number AFM04P3-000
Manufacturer Alpha Industries
File Size 15.66 KB
Description Power GaAs MESFET
Datasheet download datasheet AFM04P3-000 Datasheet

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AFM04P3-212 Power GaAs MESFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Low Noise/Medium Power GaAs MESFET Chip AFM04P3-000 Features s 21 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC–26 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface Chip Layout Description The AFM04P3-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm. The device has excellent gain and power performance through 26 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. The device employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.