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AFM06P3-213 - Power GaAs MESFET

General Description

The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 µm and a total gate periphery of 600 µm.

Key Features

  • s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC.
  • 18 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface Source 212 Gate Drain Source Gate Source Drain 213 Source.

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Datasheet Details

Part number AFM06P3-213
Manufacturer Alpha Industries
File Size 25.51 KB
Description Power GaAs MESFET
Datasheet download datasheet AFM06P3-213 Datasheet

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Other Datasheets by Alpha Industries

Part Number Description
AFM06P3-212 Power GaAs MESFET
AFM06P2-000 Power GaAs MESFET
AFM04P2-000 Power GaAs MESFET
AFM04P3-000 Power GaAs MESFET
AFM04P3-212 Power GaAs MESFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–18 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface Source 212 Gate Drain Source Gate Source Drain 213 Source Description The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 µm and a total gate periphery of 600 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. They employ Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.