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Low Noise/Medium Power GaAs MESFET Chips
AFM04P3-212, AFM04P3-213 Features
s Low Noise Figure, 0.6 dB @ 4 GHz s 20 dBm Output Power @ 18 GHz s High Associated Gain, 13 dB @ 4 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC–26 GHz s Available in Tape and Reel Packaging
Source 212 Gate Drain Source Gate Source Drain 213 Source
Description
The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 µm and a total gate periphery of 400 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. They also have excellent noise performance and can be used in the first and second stage of low noise amplifier design.
AFM04P3-212 Datasheet
