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AFM08P2-000 Datasheet Power Gaas Mesfet

Manufacturer: Alpha Industries

Overview: Ka Band Power GaAs MESFET Chip AFM08P2-000.

General Description

The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 800 µm.

The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of mercial and military applications in oscillator and amplifier circuits.

It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.

Key Features

  • s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC.
  • 40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding Chip thickness = 0.1 mm. Drain 0.110 mm 0.395 mm s High Associated Gain, 8.5 dB @ 18 GHz Gate 0.327 mm 0.655 mm 0.110 mm.

AFM08P2-000 Distributor