AFM08P2-000 Datasheet PDF | Alpha Industries

Alpha Industries AFM08P2-000

The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 800 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.

Part No.	AFM08P2-000
Datasheet	AFM08P2-000 Download
Manufacturer	Alpha Industries
Description	Power GaAs MESFET
Buy	Stock & Price

FEATURES

s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC–40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding Chip thickness = 0.1 mm. Drain 0.110 mm 0.395 mm s High Associated Gain, 8.5 dB @ 18 GHz Gate 0.327 mm 0.655 mm 0.110 mm

DESCRIPTION

Through-substrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance.

ABSOLUTE MAXIMUM RATINGS

Characteristic Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -4 V IDSS 2 mA 1.4 W -65 to +150°C 175°C

ELECTRICAL SPECIFICATIONS

at 25°C Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-off Voltage (VP) Gate to Drain Breakdown Voltage (Vbgd) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power...