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Ka Band Power GaAs MESFET Chip
AFM08P2-000 Features
s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC–40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding
Chip thickness = 0.1 mm.
Drain
0.110 mm
0.395 mm
s High Associated Gain, 8.5 dB @ 18 GHz
Gate 0.327 mm 0.655 mm
0.110 mm
Description
The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 800 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.
AFM08P2-000 Datasheet
