Description
The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
Features
- VDS (V) = -30V ID = -6.0A RDS(ON) < 50mΩ (VGS = -10V) RDS(ON) < 85mΩ (VGS = -4.5V)
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25°C TA=.