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AO4405L - P-Channel MOSFET

General Description

The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device www.DataSheet4U.com is suitable for use as a load switch or in PWM applications.

AO4405L( Green Product ) is offered in a lead-free package.

Key Features

  • VDS (V) = -30V ID = -6.0A RDS(ON) < 50mΩ (VGS = -10V) RDS(ON) < 85mΩ (VGS = -4.5V) SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25°C TA=.

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Datasheet Details

Part number AO4405L
Manufacturer Alpha Industries
File Size 146.16 KB
Description P-Channel MOSFET
Datasheet download datasheet AO4405L Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Rev 3: Nov 2004 AO4405, AO4405L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Description The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device www.DataSheet4U.com is suitable for use as a load switch or in PWM applications. AO4405L( Green Product ) is offered in a lead-free package. Features VDS (V) = -30V ID = -6.0A RDS(ON) < 50mΩ (VGS = -10V) RDS(ON) < 85mΩ (VGS = -4.