Download AO6603 Datasheet PDF
AO6603 page 2
Page 2
AO6603 page 3
Page 3

Datasheet Summary

AO6603 plementary Enhancement Mode Field Effect Transistor General Description The AO6603 uses advanced trench technology to provide excellent R .. DS(ON) and low gate charge. The plementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications). AO6603L is a Green Product ordering option. AO6603 and AO6603L are electrically identical. Features n-channel p-channel -30V VDS (V) = 20V ID = 1.7 (VGS = 4.5V) -2.5A RDS(ON) < 225mΩ (VGS = 4.5V) < 135mΩ (VGS = -10V) < 290m Ω (VGS = 2.5V) < 425m Ω (VGS = 1.8V) < 185m Ω (VGS = 2.5V) < 265m Ω (VGS = 1.8V) D1 TSOP6 Top View...