Datasheet Summary
AO6706 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is .. provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6706 is Pb-free (meets ROHS & Sony 259 specifications). AO6706L is a Green Product ordering option. AO6706 and AO6706L are electrically identical.
Features
VDS (V) = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65m Ω (VGS = 10V) RDS(ON) < 75m Ω (VGS = 4.5V) RDS(ON) < 160m Ω (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A
D...