AO6701 Datasheet | Alpha & Omega Semiconductors

Description The AO6701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is .. provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6701 is Pb-free (meets ROHS & Sony 259 specifications). AO6701L is a Green Product ordering option. AO6701 and AO6701L are electrically identical. Features VDS (V) = -30V ID = -2.3A (VGS = -10V) RDS(ON) < 135mΩ (VGS = -10V) RDS(ON) < 185mΩ (VGS = -4.5V) RDS(ON) < 265mΩ (VGS = -2.5V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A D A S G K N/C D 1 6 2 5 3 4 TSOP6 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current MOSFET -30 ±12 -2.3 -1.8 -15 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C TA=70°C TA=25°C IF IFM TA=70°C PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL Schottky reverse voltage Continuous Forward Current A Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C 20 2 1 1.15 0.7 -55 to 150 Typ 78 106 64 109.4 136.5 58.5 10 0.92 0.59 -55 to 150 Max 110 150 80 135 175 80 W °C Units °C/W °C/W AO6701 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2.3A .. Min -30 Typ Max Units V -1 -5...