AO6704 Datasheet | Alpha & Omega Semiconductors

Description The AO6704 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A .. Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6704 is Pb-free (meets ROHS & Sony 259 specifications). AO6704L is a Green Product ordering option. AO6704 and AO6704L are electrically identical. TSOP6 Top View K S G A D D Features VDS (V) = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65m Ω (VGS = 10V) RDS(ON) < 75m Ω (VGS = 4.5V) RDS(ON) < 160m Ω (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A 1 6 2 5 3 4 Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current MOSFET 30 ±12 3.6 2.9 10 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 1.39 0.89 -55 to 150 Typ 70 102 51 129 158 52 20 1.5 1 10 0.78 0.5 -55 to 150 Max 90 130 80 160 200 80 W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=3.6A RDS(ON) .. g FS VSD IS Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=3.4A VGS=2.5V, ID=1A Forward Transconductance VDS=5V, ID=3.6A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode...