AO6702 Datasheet | Alpha & Omega Semiconductors

Description The AO6702 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional .. blocking switch, or for DC-DC conversion applications. Standard Product AO6702 is Pb-free (meets ROHS & Sony 259 specifications). AO6702L is a Green Product ordering option. AO6702 and AO6702L are electrically identical. Features VDS (V) = 20V ID = 3.8A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 65mΩ (VGS = 2.5V) RDS(ON) < 95mΩ (VGS = 1.8V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A D A S G K N/C D 1 6 2 5 3 4 TSOP6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current MOSFET 20 ±8 3.8 3 10 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 1.15 0.7 -55 to 150 Typ 80.3 117 43 109.4 136.5 58.5 20 2 1 10 0.92 0.59 -55 to 150 Max 110 150 80 135 175 80 W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State °C/W Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=3.8A RDS(ON) .. g FS VSD IS Static Drain-Source On-Resistance TJ=125°C VGS=2.5V, ID=3.3A VGS=1.8V, ID=2.8A Forward Transconductance VDS=5V, ID=3.8A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.4 10 41.6 63 54 74...