AO6706 Datasheet | Alpha & Omega Semiconductors

Description The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is .. provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6706 is Pb-free (meets ROHS & Sony 259 specifications). AO6706L is a Green Product ordering option. AO6706 and AO6706L are electrically identical. Features VDS (V) = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65m Ω (VGS = 10V) RDS(ON) < 75m Ω (VGS = 4.5V) RDS(ON) < 160m Ω (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A D TSOP6 Top View A S G 1 6 2 5 3 4 K N/C D Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current MOSFET 30 ±12 3.3 2.6 10 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 1.15 0.7 -55 to 150 Typ 80.3 117 43 109.4 136.5 58.5 20 2 1 10 0.92 0.59 -55 to 150 Max 110 150 80 135 175 80 W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=3.3A RDS(ON) .. g FS VSD IS Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=3.0A VGS=2.5V, ID=1A Forward Transconductance VDS=5V, ID=3.3A Diode Forward Voltage IS=1A,VGS=0V Maximum...