Datasheet Summary
AOC2800 mon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Product Summary
The AOC2800 uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its mon-drain configuration.
Vss ID (at VGS=4.5V) RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
30V 6A < 42mΩ < 44mΩ < 49mΩ < 61mΩ
WLCSP 1.57x1.57_4
Bottom View
G2
S2
G1
S1
Top View Pin1(S1)
Equivalent Circuit
D1
D2
G1
G2
Absolu...