Datasheet Summary
20V mon-Drain Dual N-Channel AlphaMOS
General Description
- Trench Power AlphaMOS (αMOS LV) technology
- Low RSS(ON)
- Fully protected AlphaDFN package
- With ESD protection to improve battery performance and safety
- mon drain configuration for design simplicity
- RoHS and Halogen-Free pliant
Applications
- Battery protection switch
- Mobile device battery charging and discharging
Product Summary
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.7V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Typical ESD protection
20V
< 11.9mΩ < 12.5mΩ < 14mΩ < 15.5mΩ < 20mΩ
HBM Class 3A
AlphaDFN 1.7x1.7_4
Top View
Bottom View
Top View Pin1
D1
D2
Bottom...