Datasheet Summary
AON5802 mon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional .. or bi-directional load switch, facilitated by its mon-drain configuration. Standard Product AON5802 is Pb-free (meets ROHS & Sony 259 specifications). AON5802L is a Green Product ordering option. AON5802 and AON5802L are electrically identical.
Features
VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 17 mΩ (VGS = 10V) RDS(ON) <...