BLA8G1011L-300 Datasheet PDF - Ampleon Power LDMOS transistor Specs

BLA8G1011L-300 - Power LDMOS transistor

Datasheet Summary

Description

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Features

Easy power control.
Integrated ESD protection.
Enhanced ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1030 MHz to 1090 MHz).
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

Datasheet Details

Part number	BLA8G1011L-300
Manufacturer	Ampleon
File Size	400.62 KB
Description	Power LDMOS transistor
Datasheet	BLA8G1011L-300 Datasheet
Additional preview pages of the BLA8G1011L-300 datasheet.

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Full PDF Text Transcription

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BLA8G1011L(S)-300; BLA8G1011L(S)-300G Power LDMOS transistor Rev. 4 — 4 August 2016 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) tr (ns) pulsed RF 1060 32 300 16.5 56 14 tf (ns) 5 1.

Published: Apr 26, 2018 |