BLA8H0910L-500 Datasheet | Ampleon

BLA8H0910L-500; BLA8H0910LS-500 Power LDMOS transistor Rev. 1 - 7 February 2017 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS power transistor for avionics applications at frequencies from 900 MHz to 930 MHz. The BLA8H0910L-500 and BLA8H0910LS-500 are designed for high-power CW applications and are assembled in high performance ceramic packages. Table 1. Typical performance RF performance at VDS = 50 V; IDq = 90 m A in a class-AB application circuit. Test signal f Gp (MHz) (V) (W) (d B) CW [1] 915 50 500 18 CW pulsed [2][3] 915 50 500 19.5 [1] Tcase = 65 C. [2] Tcase = 25 C. [3] tp = 100 s;  = 10 %. D (%) 61 62.5 1.2 Features and benefits - High efficiency - Easy power control - Excellent ruggedness - Integrated ESD protection - Designed for broadband operation (900 MHz to 930 MHz) - Internally input matched - pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro...