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BLA8G1011LS-300 - Power LDMOS transistor

This page provides the datasheet information for the BLA8G1011LS-300, a member of the BLA8G1011L-300 Power LDMOS transistor family.

Datasheet Summary

Description

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Features

  • Easy power control.
  • Integrated ESD protection.
  • Enhanced ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (1030 MHz to 1090 MHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLA8G1011LS-300
Manufacturer Ampleon
File Size 400.62 KB
Description Power LDMOS transistor
Datasheet download datasheet BLA8G1011LS-300 Datasheet
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Full PDF Text Transcription

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BLA8G1011L(S)-300; BLA8G1011L(S)-300G Power LDMOS transistor Rev. 4 — 4 August 2016 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) tr (ns) pulsed RF 1060 32 300 16.5 56 14 tf (ns) 5 1.
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