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BLA8H0910LS-500 - Power LDMOS transistor

This page provides the datasheet information for the BLA8H0910LS-500, a member of the BLA8H0910L-500 Power LDMOS transistor family.

Datasheet Summary

Description

A 500 W LDMOS power transistor for avionics applications at frequencies from 900 MHz to 930 MHz.

The BLA8H0910L-500 and BLA8H0910LS-500 are designed for high-power CW applications and are assembled in high performance ceramic packages.

Table 1.

Features

  • High efficiency.
  • Easy power control.
  • Excellent ruggedness.
  • Integrated ESD protection.
  • Designed for broadband operation (900 MHz to 930 MHz).
  • Internally input matched.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet preview – BLA8H0910LS-500

Datasheet Details

Part number BLA8H0910LS-500
Manufacturer Ampleon
File Size 879.12 KB
Description Power LDMOS transistor
Datasheet download datasheet BLA8H0910LS-500 Datasheet
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BLA8H0910L-500; BLA8H0910LS-500 Power LDMOS transistor Rev. 1 — 7 February 2017 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS power transistor for avionics applications at frequencies from 900 MHz to 930 MHz. The BLA8H0910L-500 and BLA8H0910LS-500 are designed for high-power CW applications and are assembled in high performance ceramic packages. Table 1. Typical performance RF performance at VDS = 50 V; IDq = 90 mA in a class-AB application circuit. Test signal f VDS PL Gp (MHz) (V) (W) (dB) CW [1] 915 50 500 18 CW pulsed [2][3] 915 50 500 19.5 [1] Tcase = 65 C. [2] Tcase = 25 C. [3] tp = 100 s;  = 10 %. D (%) 61 62.5 1.
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