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BLA8H0910LS-500 - Power LDMOS transistor

Download the BLA8H0910LS-500 datasheet PDF. This datasheet also covers the BLA8H0910L-500 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

A 500 W LDMOS power transistor for avionics applications at frequencies from 900 MHz to 930 MHz.

The BLA8H0910L-500 and BLA8H0910LS-500 are designed for high-power CW applications and are assembled in high performance ceramic packages.

Table 1.

Key Features

  • High efficiency.
  • Easy power control.
  • Excellent ruggedness.
  • Integrated ESD protection.
  • Designed for broadband operation (900 MHz to 930 MHz).
  • Internally input matched.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLA8H0910L-500-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLA8H0910LS-500
Manufacturer Ampleon
File Size 879.12 KB
Description Power LDMOS transistor
Datasheet download datasheet BLA8H0910LS-500 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLA8H0910L-500; BLA8H0910LS-500 Power LDMOS transistor Rev. 1 — 7 February 2017 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS power transistor for avionics applications at frequencies from 900 MHz to 930 MHz. The BLA8H0910L-500 and BLA8H0910LS-500 are designed for high-power CW applications and are assembled in high performance ceramic packages. Table 1. Typical performance RF performance at VDS = 50 V; IDq = 90 mA in a class-AB application circuit. Test signal f VDS PL Gp (MHz) (V) (W) (dB) CW [1] 915 50 500 18 CW pulsed [2][3] 915 50 500 19.5 [1] Tcase = 65 C. [2] Tcase = 25 C. [3] tp = 100 s;  = 10 %. D (%) 61 62.5 1.