BLA8G1011L-300G Description
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Test information Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) tr (ns) pulsed RF 1060 32 300 16.5 56 14 tf (ns) 5 1.2.
BLA8G1011L-300G Key Features
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1030 MHz to 1090 MHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances