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BLM2301 - P-Channel Enhancement Mode Power MOSFET

General Description

The BLM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V D G S Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Marking and pin Assignment.

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Datasheet Details

Part number BLM2301
Manufacturer BELLING
File Size 222.28 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM2301 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Product BLM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.