BLM2312 Datasheet PDF - BELLING N-Channel Enhancement Mode Power MOSFET Specs

BLM2312 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The BLM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Features

VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram Marking and pin assignment.

Datasheet Details

Part number	BLM2312
Manufacturer	BELLING
File Size	409.90 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	BLM2312 Datasheet
Additional preview pages of the BLM2312 datasheet.

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Full PDF Text Transcription

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Pb Free Product BLM2312 N-Channel Enhancement Mode Power MOSFET Description The BLM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features ● VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.

Published: Feb 25, 2016 |