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BLM2305 - P-Channel Enhancement Mode Power MOSFET

General Description

The BLM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -4.1A RDS(ON).

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Datasheet Details

Part number BLM2305
Manufacturer BELLING
File Size 218.95 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM2305 Datasheet

Full PDF Text Transcription (Reference)

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Pb Free Product BLM2305 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.