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BLM2304 - N-Channel Enhancement Mode Power MOSFET

General Description

The BLM2304 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON).

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Datasheet Details

Part number BLM2304
Manufacturer BELLING
File Size 699.16 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM2304 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ROHS Product BLM2304 N-Channel Enhancement Mode Power MOSFET Description The BLM2304 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.