• Part: BS616UV8010
  • Description: Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
  • Manufacturer: Brilliance Semiconductor
  • Size: 208.64 KB
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BS616UV8010 Key Features

  • DESCRIPTION
  • Ultra low operation voltage : 1.8 ~ 3.6V
  • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating current
  • High speed access time : -70 70ns (Max.) at Vcc=2V -10 100ns (Max.) at Vcc=2V
  • Automatic power down when chip is deselected
  • Three state outputs and TTL patible
  • Fully static operation
  • Data retention supply voltage as low as 1.5V
  • Easy expansion with CE2,CE1 and OE options
  • I/O Configuration x8/x16 selectable by LB and UB pin

Related Brilliance Semiconductor Datasheets

Part Number Description
BS616UV8011 Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616UV8020 Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021 Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV1010 Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
BS616UV1610 Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit