Datasheet4U Logo Datasheet4U.com

BS616UV8021 - Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

Datasheet Summary

Description

BS616UV8021 Ultra low operation voltage : 1.8 ~ 2.3V Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc=2.0V -10 100n

Features

  • S Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable.

📥 Download Datasheet

Datasheet preview – BS616UV8021

Datasheet Details

Part number BS616UV8021
Manufacturer Brilliance Semiconductor
File Size 215.85 KB
Description Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Datasheet download datasheet BS616UV8021 Datasheet
Additional preview pages of the BS616UV8021 datasheet.

📁 Similar Datasheet

  • BS616LV4017 - Very Low Power/Voltage CMOS SRAM 256K X 16 bit (BSI)
  • BS600 - Water Bath Instruction Manual (Yamato)
  • BS6004 - PVC Cable (Linnet)
  • BS6004 - Cable (Nexans)
  • BS62LV1605 - Very Low Power/Voltage CMOS SRAM 2M X 8 bit (Brilliance)
  • BS62LV4007 - Very Low Power/Voltage CMOS SRAM 512K X 8 bit (BSI)
  • BS62LV8006 - Very Low Power/Voltage CMOS SRAM 1M X 8 bit (Brilliance)
  • BS62UV1027 - Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit (Brilliance)
  • BS65F2042 - NFC Reader Touch Flash MCU (Holtek Semiconductor)
  • BS660 - Water Bath Instruction Manual (Yamato)
Other Datasheets by Brilliance Semiconductor
  • BS616UV8020 - Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
  • BS616UV8010 - Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
  • BS616UV8011 - Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
  • BS616UV1010 - Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
  • BS616UV1610 - Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit
  • BS616UV1620 - Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
  • BS616UV2011 - Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
  • BS616UV2021 - Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

Full PDF Text Transcription

Click to expand full text
BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable „ DESCRIPTION BS616UV8021 • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=2.0V -10 100ns (Max.) at Vcc=2.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
Published: |