MSF10N40 Datasheet | Bruckewell Technology

Description The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all mercial-industrial applications Features - Originative New Design - Very Low Intrinsic Capacitances - Excellent Switching Characteristics - 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V - Extended Safe Operating Area - Low gate charge (typ 30n C) - 100% Avalanche Tested - Ro HS pliant package Application - Power Factor Correction - LCD TV Power - Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Value 400 ±30 10.5 6.6 402 378 9.2 13.9 Unit V V A A A m J A m J Publication Order Number: [MSF10N40] © Bruckewell Technology Corporation Rev. A...