MSF10N80 Datasheet | Bruckewell Technology

Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all mercial-industrial applications Features - 100% EAS Test - Rugged Gate Oxide Technology - Extremely Low Intrinsic Capacitances - Remarkable Switching Characteristics - Unequalled Gate Charge: 10.5 n C (Typ.) - Extended Safe Operating Area Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V - Ro HS pliant package Application - Power Factor Correction - LCD TV Power - Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current Pulsed EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy Value 800 ±30 10 6.5 40 960 24 Unit V V A A A m J m J Publication Order Number: [MSF10N80] © Bruckewell Technology Corporation Rev. A -2014 800V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise...