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MSF10N80 - 800V N-Channel MOSFET

General Description

The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • 100% EAS Test.
  • Rugged Gate Oxide Technology.
  • Extremely Low Intrinsic Capacitances.
  • Remarkable Switching Characteristics.
  • Unequalled Gate Charge: 10.5 nC (Typ. ).
  • Extended Safe Operating Area Lower RDS(ON) : 5.5 Ω (Typ. ) @VGS=10V.
  • RoHS compliant package.

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Datasheet Details

Part number MSF10N80
Manufacturer Bruckewell
File Size 820.19 KB
Description 800V N-Channel MOSFET
Datasheet download datasheet MSF10N80 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • 100% EAS Test • Rugged Gate Oxide Technology • Extremely Low Intrinsic Capacitances • Remarkable Switching Characteristics • Unequalled Gate Charge: 10.5 nC (Typ.) • Extended Safe Operating Area Lower RDS(ON) : 5.5 Ω (Typ.