MSF11N70 Datasheet | Bruckewell Technology

Description The MSF11N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all mercial-industrial applications Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Ro HS pliant package available Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current @ TC=25°C ID Continuous Drain Current @ TC=100°C IDM Pulsed Drain Current IAR Avalanche Current EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt Value 700 ±30 1.1 6.5 40 10 658 17.8 4.5 Unit V V A A A A m J m J V/ns Publication Order Number: [MSF11N70] © Bruckewell Technology Corporation Rev. A -2014 N-Channel 700V MOSFET Absolute Maximum Ratings Symbol Parameter Power Dissipation (TC=25°C)...