MSF10N80A Datasheet | Bruckewell Technology

Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46n C (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol VDSS IDM VGS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current Drain Current -Continuous (TC=25℃) -Continuous (TC=100℃) -Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC=25℃) - Derate above 25℃ TJ,TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, TL 1/8'' from case for 5 seconds - Drain current limited by maximum junction temperature Bruckewell Technology Corp., Ltd. Value 800 10 6 40 ±30 900 9 24 4.0 60 0.48 - 55 to + 150 Unit V A A A V m J A m J V/ns W W/℃ ℃ ℃ Bruckewell Technology Corp.,...