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MSF10N80A - 800V N-Channel MOSFET

Key Features

  • Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ. ) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Parameter Drain-Source Voltage Drain Current Drain Current Drain Current -Continuous (TC=25℃) -Continuous (TC=100℃) -Pulsed Gate-Source Voltage Single Pulsed Avalanche.

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Datasheet Details

Part number MSF10N80A
Manufacturer Bruckewell
File Size 1.25 MB
Description 800V N-Channel MOSFET
Datasheet download datasheet MSF10N80A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSF10N80A 800V N-Channel MOSFET FEATURES Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ.