MSF10N65 Datasheet | Bruckewell Technology

Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all mercial-industrial applications Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Ro HS pliant package Application - Power Factor Correction - LCD TV Power - Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy d V/dt Peak Diode Recovery d V/dt Value 650 ±30 10 6.0 40 710 10 16.2 4.5 Unit V V A A A m J A m J V/ns Publication Order Number: [MSF10N65] © Bruckewell Technology Corporation Rev. A -2014 650V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise...