CSD40N70 - N-Channel Trench Power MOSFET

General Description

The CSD40N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a wide variety of applications.

Key Features

VDS = 40V,ID =60A RDS(ON) < 9.5 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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CSD40N70 n-channel trench power mosfet by CASS - Datasheet Preview

Datasheet Details

Part number	CSD40N70
Manufacturer	CASS
File Size	825.51 KB
Description	N-Channel Trench Power MOSFET
Datasheet	CSD40N70 Datasheet

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N-Channel Trench Power MOSFET CSD40N70 General Description The CSD40N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 40V,ID =60A RDS(ON) < 9.5 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management 100% UIS TESTED! 100% ΔVds TESTED! Schematic Diagram Marking and pin Assignment TO-252(DPAK) top view Package Marking and Ordering Information Device Marking Device Device Package CSD40N70 CSD40N70 TO-252 Reel Size 325mm Table 1.