Datasheet Summary
CEP3120/CEB3120
N-Channel Enhancement Mode Field Effect Transistor Features
30V, 40A,RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
S CEB SERIES TO-263(DD-PAK) G
CEP SERIES...