CEB658N Datasheet | CET

FEATURES Type CEP658N CEB658N CEF685N VDSS 180V 180V 180V RDS(ON) 0.22Ω 0.22Ω 0.22Ω ID 16A 16A 16A d PRELIMINARY @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 CEF SERIES TO-220F ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg e TO-220F Units V V ±20 16 64 125 1.0 -55 to 150 16 64 40 0.32 d d A A W W/ C C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.0 62.5 Limit 3.1 65 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 2. 2006.Oct http://.cetsemi. CEP658N/CEB658N CEF658N Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Test Condition VGS = 0V, ID = 250µA VDS = 160V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 16A 2 0.2 Min 180 25 100 -100 4 0.22 Typ Max Units V µA 4 n A n A V...