CEB65A3 Datasheet | CET

FEATURES 25V, 45A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 18mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 25 Units V V A A W W/ C C ±20 45 180 43 0.29 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 62.5 Units C/W C/W 2006.July 1 http://.cetsemi. CEP65A3/CEB65A3 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 30A VDS = 15V, ID =35A, VGS = 10V VDD = 15V, ID = 35A, VGS = 4.5V, RGEN = 16Ω 20 6 50 18 14.7 2.5 3.1 45 1.2 40 10 100 35 20 ns ns ns ns n C n C n C A V Ciss Coss Crss VDS = 15V, VGS = 0V, f = 1.0 MHz 921 209 108 p F p F p F VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 35A VGS = 4.5V, ID = 24A 1 9 14 2.5 12 18 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 25V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 25 1 100 -100 V µA Tc = 25 C unless otherwise noted Symbol Test Condition...